15 February 2008 Nanopatterning and selective area epitaxy of GaN on Si substrate
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Abstract
Due to lack of suitable lattice matched substrates, III-Nitride materials are usually grown on sapphire, SiC, and silicon. The heteroepitaxy of GaN on these substrates often incorporates a high density of dislocation and point defects due to lattice and thermal mismatch. It is desirable to reduce the defect density in III-Nitrides in order to fabricate longer lifetime and high brightness light emitting diodes, lasers, and high-electron mobility transistors. In this context, nano-scale epitaxy on patterned Si substrates allows lateral growth, which eventually leads to a reduction of defect density and strain in the overgrown GaN films. Large area nano-patterning with dielectric masks would also be useful to fabricate highly-ordered and dense nitride nanostructures by selective area homo- and hetero-epitaxy.
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L. S. Wang, L. S. Wang, S. J. Chua, S. J. Chua, S. Tripathy, S. Tripathy, K. Y. Zang, K. Y. Zang, B. Z. Wang, B. Z. Wang, J. H. Teng, J. H. Teng, } "Nanopatterning and selective area epitaxy of GaN on Si substrate", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940A (15 February 2008); doi: 10.1117/12.762149; https://doi.org/10.1117/12.762149
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