15 February 2008 Degradation modes of high-power InGaN/GaN laser diodes on low-defect GaN substrates
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We investigated the degradation modes in the aging processes of TO-18 packaged (Al, In)GaN laser diodes grown by metal organic chemical vapor deposition (MOCVD) on low-dislocation-density bulk GaN wafers. The lifetime-limiting degradation drastically occurred in the initial stage, and we found it was due to the photon-enhanced carbon deposition on the oxide mirror surface at the laser-emitting facets. The deposited carbon would be originated mostly from residual organic materials with C-H bonds. The carbon sources could be successfully removed by plasma cleaning just before cap-welding. The improved lifetime of the plasma cleaned laser diode packed with argon gas exceeds 2,000 h under 160 mW cw-operation at 60 °C. The lifetime-limiting degradation is attributed to nonradiative recombination related with the defects extended from GaN substrates. The activation energy of the degradation extracted from the thermally accelerated aging tests was determined to be 0.81 eV.
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C. C. Kim, C. C. Kim, Y. Choi, Y. Choi, Y. H. Jang, Y. H. Jang, M. K. Kang, M. K. Kang, Minho Joo, Minho Joo, M. S. Noh, M. S. Noh, "Degradation modes of high-power InGaN/GaN laser diodes on low-defect GaN substrates", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940O (15 February 2008); doi: 10.1117/12.767599; https://doi.org/10.1117/12.767599

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