28 February 2008 16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase
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We report temperature tuning of pulsed operated InGaN LDs (5×500μm stripe, grown on low-dislocation, high-pressure grown GaN substrates). The devices are characterized by a rather weak temperature dependence of the threshold current. A very broad temperature tuning range of 16nm was obtained with increase of operation temperature by almost 200K. We were able to tune the diode from the initial wavelength of 415nm at room temperature up to 431nm at 201°C. After thermally cycling the device no substantial degradation was noticed. We observed multimode emission and mode hopping with temperature increase. At 201°C the laser's threshold current doubled and the slope efficiency of the L-I curve dropped by 35%. These results demonstrate the potential usage of temperature tuning of nitride-based-LDs for the atomic spectroscopy-related applications.
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K. Komorowska, K. Komorowska, P. Wisniewski, P. Wisniewski, R. Czernecki, R. Czernecki, P. Prystawko, P. Prystawko, M. Leszczynski, M. Leszczynski, T. Suski, T. Suski, I. Grzegory, I. Grzegory, S. Porowski, S. Porowski, S. Grzanka, S. Grzanka, T. Swietlik, T. Swietlik, L. Marona, L. Marona, T. Stacewicz, T. Stacewicz, P. Perlin, P. Perlin, "16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940Q (28 February 2008); doi: 10.1117/12.762871; https://doi.org/10.1117/12.762871

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