1/f noise in nitride-based spintronic devices

Peter H. Handel; Amanda M. Truong

doi:10.1117/12.762348

15 February 2008 1/f noise in nitride-based spintronic devices

Peter H. Handel, Amanda M. Truong

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68941G (2008) https://doi.org/10.1117/12.762348
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Spintronics is a new direction in nitride electronics, due to the development of rare-earth-doped nitrides with ferromagnetic properties even at room temperature. This allows manipulation of both the spin and the charge transported by the electrons. It allows the extension of Moore's law. However, the injected spin-polarized current is subject to spin-flip due to various causes. The rate of each of these spin-flip currents is affected by quantum 1/f noise, because of the low-frequency photon emission amplitude that is associated with the elementary spin flip process, no matter what causes the spin flip. As a result, in a spin valve, both the leakage current and the allowed current will show 1/f noise. In devices with injection and subsequent control of spin-polarized electrons, the effects obtained will also show this spintronic quantum 1/f noise. For instance, the light output of a spin-controlled LED will exhibit quantum 1/f intensity fluctuations. The present paper calculates the 1/f noise expected in spintronic currents and in rare-earth-doped nitride devices and systems that carry them. The spectral density of this fundamental 1/f noise is inherently proportional to the square of the current that is affected by it, but is also inversely proportional to the number of carriers defining this current. The latter dependence causes the spectrum to be proportional to the first power of the current.

Citation Download Citation

Peter H. Handel and Amanda M. Truong "1/f noise in nitride-based spintronic devices", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941G (15 February 2008); https://doi.org/10.1117/12.762348

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