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6 February 2008 Status of GaN HEMT performance and reliability
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Abstract
This report will focus on the status of GaN HEMT based amplifier technology development at RFMD. This technology is based around GaN on semi-insulating SiC substrates for optimal thermal performance. RFMD's 0.5μm gate technology features high performance advanced field plate structures, including a unit power cell producing high gain (21dB), high power density (3-5W/mm at 28V) and high efficiency (65-70 percent) at cellular frequencies. We will report on transistor and module performance relevant to applications ranging from high power, high bandwidth amplifiers, to switches and ICs for radar, electronic warfare, cellular infrastructure and homeland security. Additionally, we will report on reliability results that demonstrate capability for dependable, high voltage operation.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel S. Green, J. D. Brown, R. Vetury, S. Lee, S. R. Gibb, K. Krishnamurthy, M. J. Poulton, J. Martin, and J. B. Shealy "Status of GaN HEMT performance and reliability", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941M (6 February 2008); https://doi.org/10.1117/12.763781
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