28 February 2008 Recent progress of GaN electronic devices for wireless communication system
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We report a current status of high-power GaN HEMTs for high-power and high-efficiency amplifiers with higher efficiency by 5% especially at a backed-off region than the conventional GaN HEMTs. First, we introduce our specific device structure GaN HEMT with dispersion-free I-V characteristics, low Idsq-drift and high reliability. Record average drain efficiency of over 50% and linear gain of 17.2 dB were obtained at an output power of 45 dBm and 2.5 GHz. Next, we discuss their reliability with high-temperature life tests resulting in their estimated life of over 1 x 106 hours at Tj of 200 °C. High-k insulated gate HEMTs using Ta2O5 were also developed. Finally, we describe the next generation GaN HEMTs for millimeter-wave applications.
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T. Kikkawa, T. Kikkawa, K. Imanishi, K. Imanishi, N. Hara, N. Hara, H. Shigematsu, H. Shigematsu, K. Joshin, K. Joshin, "Recent progress of GaN electronic devices for wireless communication system", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941Q (28 February 2008); doi: 10.1117/12.772152; https://doi.org/10.1117/12.772152

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