AlxIn1-xN/GaN heterostructure field effect transistors

J. Xie; X. Ni; M. Wu; J. H. Leach; Ü. Özgür; H. Morkoç

doi:10.1117/12.771297

15 February 2008 Al_xIn_1-xN/GaN heterostructure field effect transistors

J. Xie, X. Ni, M. Wu, J. H. Leach, Ü. Özgür, H. Morkoç

Proceedings Volume 6894, Gallium Nitride Materials and Devices III; 68941R (2008) https://doi.org/10.1117/12.771297
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

In AlGaN/GaN heterostructure field effect transistors (HFETs), two-dimensional-electron-gas (2DEG), induced by strong piezoelectric and spontaneous polarization field, has high sheet density, and can be tuned up to 5 ×10¹³ cm^-2 with pure AlN barrier.[Appl. Phys. Lett. 90, 182112 (2007)].For Al compositions larger than 40%, due to the large lattice mismatch between GaN and AlGaN, strain-related issues significantly reduce the mobility for these high sheet carrier densities. Recently, using nearly lattice-matched AlInN/GaN to improve the performance of HFETs has been studied theoretically and experimentally. A high sheet density (2.42 ×10¹³ cm²) with >1000 cm²/Vs mobility has been reported by inserting an AlN spacer layer between the AlGaN barrier and GaN channel. However, low-temperature mobilities for AlInN/GaN HFETs are much lower than those for AlGaN/GaN HFETs. In this paper, we study the Al_1-xIn_xN/AlN/GaN (x=0.20 - 0.12) (HFETs) grown by metalorganic chemical vapor deposition. Reduction of In composition from 20% to 12% increased the room temperature equivalent two-dimensional-electron-gas (2DEG) density from 0.90×10¹³ cm^-2 to 1.64 ×10¹³ cm^-2 with corresponding electron mobilities of 1600 cm²/Vs and 1410 cm²/Vs. Furthermore, at 10 K, the mobility reached 17,600 cm²/Vs with a sheet density 9.6 ×10¹² cm^-2 for the nearly lattice-matched Al_0.82In_0.18N /AlN/GaN heterostructure. The HFETs having 1 μm gate length exhibited a maximum transconductance of ~ 250 mS/mm with good pinch-off characteristics.

Citation Download Citation

J. Xie, X. Ni, M. Wu, J. H. Leach, Ü. Özgür, and H. Morkoç "Al_xIn_1-xN/GaN heterostructure field effect transistors", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941R (15 February 2008); https://doi.org/10.1117/12.771297

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