15 February 2008 GaN Schottky barrier and metal-semiconductor-metal photodetectors with in situ SiNx nano-network
Author Affiliations +
Abstract
In this paper, we investigated Schottky and metal-semiconductor-metal (MSM) photodetector structures fabricated on GaN templates with in situ SiNx nanonetwork, which were shown to reduce the dislocation densities significantly in the overgrown material. The GaN layers were grown by metalorganic chemical vapor deposition. The peak responsivity of the Schottky photodetectors on templates with SiNx nanonetwork was measured to be 0.16 A/W, significantly larger than that for the control samples (0.09 A/W). The MSM photodetectors on templates with SiNx nanonetwork also showed significantly enhanced photoresponsivity (100 A/W) when compared to the control sample without any SiNx (30 A/W) and photoconductive gain. The improvement in the photoresponsivity in both Schottky and MSM photodetector structures with the use of SiNx nanonetwork is due to the reduction of dislocation densities.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Xie, J. Mateo, Ü. Özgür, H. Morkoç, "GaN Schottky barrier and metal-semiconductor-metal photodetectors with in situ SiNx nano-network", Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941S (15 February 2008); doi: 10.1117/12.764245; https://doi.org/10.1117/12.764245
PROCEEDINGS
5 PAGES


SHARE
Back to Top