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7 March 2008 Monolithic growth of the direct band gap material Ga(NAsP) lattice matched on (001) silicon substrate
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The GaP-based dilute nitride Ga(NAsP) reveals a direct band gap and first laser device operation based on GaP substrate have been demonstrated recently. Since the lattice mismatch between GaP and Si is very small and the defect free deposition of thick GaP/Ga(NP) sequences on off-oriented Si substrate have been reported in literature, the epitaxial transfer of this novel direct band gap material Ga(NAsP) on Si substrate should allow for the monolithic integration of laser diodes on Si microprocessors. The present study introduces a nucleation scheme of GaP on exact oriented (001) Si substrate by metal organic vapour phase epitaxy (MOVPE) to achieve this goal. Appling an optimized annealing procedure to (001) Si substrates with a slight off-orientation towards (see manuscript) direction leads to a Si surface, where step-doubling has set in and bi-atomic terraces are formed. Even though mono-atomic terraces are still present in low density, an optimized GaP nucleation procedure ensures self-annihilation of all present antiphase domains (APDs) and reveals an antiphase disorder free III/V film on Si after the deposition of about 50nm of GaP. This ideal nucleation layer together with a precise strain-management allows for the deposition of Ga(NAsP)/(BGa)(AsP) multi-quantum-well (MQW) heterostructures embedded in 1μm thick (BGa)P layers on Si substrate. Structural investigations using X-ray diffraction (XRD) and transmission electron microscopy (TEM) prove a high crystal quality and abrupt heterointerfaces. This monolithic integration concept of the GaP-based laser material on exact oriented (001) Si substrates enables the integration of optoelectronic devices into the standard CMOS process.
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B. Kunert, I. Németh, S. Zinnkann, G. Lukin, T. B. Adams, K. Volz, and W. Stolz "Monolithic growth of the direct band gap material Ga(NAsP) lattice matched on (001) silicon substrate", Proc. SPIE 6896, Integrated Optics: Devices, Materials, and Technologies XII, 68960Y (7 March 2008);

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