Photonic crystal-based GE-PON triplexer using point defects

Dae-Seo Park; Beom-Hoan O; Se-Geun Park; El-Hang Lee; Seung Gol Lee

doi:10.1117/12.762186

12 February 2008 Photonic crystal-based GE-PON triplexer using point defects

Dae-Seo Park, Beom-Hoan O, Se-Geun Park, El-Hang Lee, Seung Gol Lee

Proceedings Volume 6897, Optoelectronic Integrated Circuits X; 689711 (2008) https://doi.org/10.1117/12.762186
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

In this paper, we newly propose an optical triplexer which is one of key components in Gigabit Ethernet Passive Optical Network for Fiber-To-The-Home network. Based on a photonic crystal structure with local point defects, two types of optical triplexers were optimally designed. The size-tuned optical triplexer shows the extinction ratios of -17.8 dB, -14.4 dB, and -15.9 dB for the wavelengths of 1310nm, 1490nm, and 1550 nm, respectively. And the index-tuned optical triplexer shows the extinction ratios of -19.24dB, -17.09dB, and -22.68dB for the wavelengths of 1310nm, 1490nm, and 1550 nm, respectively. The size of the proposed optical triplexers were about 4 × 3 μm².

Citation Download Citation

Dae-Seo Park, Beom-Hoan O, Se-Geun Park, El-Hang Lee, and Seung Gol Lee "Photonic crystal-based GE-PON triplexer using point defects", Proc. SPIE 6897, Optoelectronic Integrated Circuits X, 689711 (12 February 2008); https://doi.org/10.1117/12.762186

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