26 February 2008 Ge photodetectors integrated in CMOS photonic circuits
Author Affiliations +
Abstract
We describe our approach to the monolithic integration of Ge photodetectors in a photonics-enabled CMOS technology. Ge waveguide photodetectors allow fast and efficient conversion of optical signals in the near infrared (1.55μm) to the electrical domain thus enabling the fabrication of compact, high speed (10Gbps) receivers.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Masini, G. Masini, S. Sahni, S. Sahni, G. Capellini, G. Capellini, J. Witzens, J. Witzens, J. White, J. White, D. Song, D. Song, C. Gunn, C. Gunn, "Ge photodetectors integrated in CMOS photonic circuits", Proc. SPIE 6898, Silicon Photonics III, 689808 (26 February 2008); doi: 10.1117/12.767035; https://doi.org/10.1117/12.767035
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top