13 February 2008 Stark effect at dislocations in silicon for modulation of a 1.5 μm light emitter
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A MOS-LED and a p-n LED emitting based on the dislocation-related luminescence (DRL) at 1.5 micron were already demonstrated by the authors. Here we report recent observation of the Stark effect for the DRL in Si. Namely, a red/blue-shift of the DRL peak positions was observed in electro- and photo-luminescence when the electric field in the pn-LED was increased/lowered. Fitting the experimental data yields a strong characteristic coefficient of 0.0186 meV/(kV/cm)2. This effect may allow realization of a novel Si-based emitter and modulator combined in a single device.
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Martin Kittler, Martin Kittler, Manfred Reiche, Manfred Reiche, Teimuraz Mchedlidze, Teimuraz Mchedlidze, Tzanimir Arguirov, Tzanimir Arguirov, Guobin Jia, Guobin Jia, Winfried Seifert, Winfried Seifert, Stephan Suckow, Stephan Suckow, Thomas Wilhelm, Thomas Wilhelm, } "Stark effect at dislocations in silicon for modulation of a 1.5 μm light emitter", Proc. SPIE 6898, Silicon Photonics III, 68980G (13 February 2008); doi: 10.1117/12.773295; https://doi.org/10.1117/12.773295

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