13 February 2008 Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector
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Abstract
Recently, AlGaInAs-silicon evanescent lasers have been demonstrated as a method of integrating active photonic devices on a silicon based platform. This hybrid waveguide architecture consists of III-V quantum wells bonded to silicon waveguides. The self aligned optical mode leads to a bonding process that is manufacturable in high volumes. Here give an overview of a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon evanescent photodetectors used to measure the laser output.
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Alexander W. Fang, Alexander W. Fang, Richard Jones, Richard Jones, Hyundai Park, Hyundai Park, Oded Cohen, Oded Cohen, Omri Raday, Omri Raday, Mario J. Paniccia, Mario J. Paniccia, John E. Bowers, John E. Bowers, "Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector", Proc. SPIE 6898, Silicon Photonics III, 68980M (13 February 2008); doi: 10.1117/12.767564; https://doi.org/10.1117/12.767564
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