26 February 2008 Ge photodetectors integrated in Si waveguides
Author Affiliations +
Proceedings Volume 6898, Silicon Photonics III; 689815 (2008); doi: 10.1117/12.765701
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States
Abstract
This paper reports theoretical and experimental investigations of germanium photodetectors integrated in silicon on insulator waveguides for metal-semiconductor-metal (MSM) photodetectors integrated in a slightly etched rib waveguide. Experimental characteristics of germanium on silicon photodetectors have been obtained using time measurements with femtosecond pulses and opto-RF experiments. For MSM structure with 1μm electrode spacing, the measured bandwidth under 6V bias is 25 GHz at 1.55 μm wavelength with a responsivity as high as 1 A/W and the bandwidth reaches 30GHz for 0.7μm electrode spacing under 1V bias.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Vivien, Mathieu Rouvière, Jean-Marc Fédéli, Delphine Marris-Morini, Jean-François Damlencourt, Loubna El Melhaoui, Eric Cassan, Xavier Le Roux, Paul Crozat, Juliette Mangeney, Suzanne Laval, "Ge photodetectors integrated in Si waveguides", Proc. SPIE 6898, Silicon Photonics III, 689815 (26 February 2008); doi: 10.1117/12.765701; http://dx.doi.org/10.1117/12.765701
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Germanium

Photodetectors

Silicon

Electrodes

Waveguides

Absorption

Picosecond phenomena

Back to Top