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26 February 2008 Ge photodetectors integrated in Si waveguides
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Abstract
This paper reports theoretical and experimental investigations of germanium photodetectors integrated in silicon on insulator waveguides for metal-semiconductor-metal (MSM) photodetectors integrated in a slightly etched rib waveguide. Experimental characteristics of germanium on silicon photodetectors have been obtained using time measurements with femtosecond pulses and opto-RF experiments. For MSM structure with 1μm electrode spacing, the measured bandwidth under 6V bias is 25 GHz at 1.55 μm wavelength with a responsivity as high as 1 A/W and the bandwidth reaches 30GHz for 0.7μm electrode spacing under 1V bias.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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