26 February 2008 Ge photodetectors integrated in Si waveguides
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This paper reports theoretical and experimental investigations of germanium photodetectors integrated in silicon on insulator waveguides for metal-semiconductor-metal (MSM) photodetectors integrated in a slightly etched rib waveguide. Experimental characteristics of germanium on silicon photodetectors have been obtained using time measurements with femtosecond pulses and opto-RF experiments. For MSM structure with 1μm electrode spacing, the measured bandwidth under 6V bias is 25 GHz at 1.55 μm wavelength with a responsivity as high as 1 A/W and the bandwidth reaches 30GHz for 0.7μm electrode spacing under 1V bias.
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Laurent Vivien, Laurent Vivien, Mathieu Rouvière, Mathieu Rouvière, Jean-Marc Fédéli, Jean-Marc Fédéli, Delphine Marris-Morini, Delphine Marris-Morini, Jean-François Damlencourt, Jean-François Damlencourt, Loubna El Melhaoui, Loubna El Melhaoui, Eric Cassan, Eric Cassan, Xavier Le Roux, Xavier Le Roux, Paul Crozat, Paul Crozat, Juliette Mangeney, Juliette Mangeney, Suzanne Laval, Suzanne Laval, "Ge photodetectors integrated in Si waveguides", Proc. SPIE 6898, Silicon Photonics III, 689815 (26 February 2008); doi: 10.1117/12.765701; https://doi.org/10.1117/12.765701

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