Optical properties of beta-FeSi2 on Si (100) inclined substrate

Hiroyasu Takada; Shin-ichiro Uekusa

doi:10.1117/12.762793

13 February 2008 Optical properties of β-FeSi₂ on Si (100) inclined substrate

Hiroyasu Takada, Shin-ichiro Uekusa

Proceedings Volume 6898, Silicon Photonics III; 68981G (2008) https://doi.org/10.1117/12.762793
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

β-FeSi₂has been attracting a great deal of attention because of its compatibility with Si-based light-emitting diodes (LEDs). It has also been reported that Β-FeSi₂ thin film undergoes a direct transition with a band gap of about 0.85 eV. However, some authors have reported that β-FeSi₂ has an indirect band gap structure on the basis of several first principles calculations. This difference is thought to be induced by the stress of the β-FeSi₂ interface acting on Si by lattice mismatch, which affects the band structure of the β-FeSi₂ thin film. To investigate the effect, we evaluated the optical properties of β-FeSi₂ grown on lattice matched Si (001) substrate 8°off toward the <110> direction. All samples were formed by depositing Fe on the Si substrate to grow β-FeSi₂ thin film by electron beam deposition. From Raman measurements, it was observed that the samples prepared on inclined substrate shifted to higher wave numbers. From the optical absorption measurement, we observed that the band structure was changed by the Si off substrate. Additionally, the PL intensity at about 0.8 eV for the samples grown on the Si off substrate was increased.

Citation Download Citation

Hiroyasu Takada and Shin-ichiro Uekusa "Optical properties of β-FeSi₂ on Si (100) inclined substrate", Proc. SPIE 6898, Silicon Photonics III, 68981G (13 February 2008); https://doi.org/10.1117/12.762793

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