Paper
12 August 1986 X-Ray Diffraction of CdTe Epitaxial Layers on GaAs Substrates as a Function of Temperature
R. D. Horning, J. -L. Staudenmann, U. Bonse, D. K. Arch, J. L. Schmit
Author Affiliations +
Abstract
A (0,0,1) epitaxial layer of CdTe on a (0,0,1) GaAs substrate has been studied as a function of temperature by x-ray diffraction. Lattice parameters and integrated intensities of Bragg reflections were measured between 10 K and 360 K using a wavelength of 0.7093 Å (Mo Kα). The lattice parameters were measured parallel and perpendicular to the interface. The changes of the integrated intensities with temperature give information about the thermal vibrations. Average Debye temperatures for the substrate and epilayer are 232±2 K and 142±2 K, respectively. These data are compared with data from CdTe and GaAs single crystals in order to understand how strain is propagated and/or relieved in the composite system.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. D. Horning, J. -L. Staudenmann, U. Bonse, D. K. Arch, and J. L. Schmit "X-Ray Diffraction of CdTe Epitaxial Layers on GaAs Substrates as a Function of Temperature", Proc. SPIE 0690, X-Rays in Materials Analysis: Novel Applications and Recent Developments, (12 August 1986); https://doi.org/10.1117/12.936609
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium arsenide

Crystals

Temperature metrology

Chemical species

Interfaces

Composites

Diffraction

Back to Top