1 February 2008 Novel routes in heteroepitaxy and selective area growth for nanophotonics
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Integration of active photonic components on silicon and silicon on insulator (SOI) would be versatile for nanophotonics since CMOS compatible processes are available for fabricating passive devices on Si/SOI. Selective area growth of III-V semiconductors is also attractive for realising periodic structures for nanophotonics. Here we report on the recent results of high quality InP on Si and InP on SOI achieved by means of nanopatterning. MQW structures have been realised on InP/Si and InP/SOI. We would elaborate routes for monolithic integration of active and passive devices for nanophotonics.
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Sebastian Lourdudoss, Sebastian Lourdudoss, Fredrik Olsson, Fredrik Olsson, Yanting Sun, Yanting Sun, } "Novel routes in heteroepitaxy and selective area growth for nanophotonics", Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000H (1 February 2008); doi: 10.1117/12.767339; https://doi.org/10.1117/12.767339

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