1 February 2008 Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes
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Abstract
We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb2 and As2 fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2,As2) and (Sb4,As4) is also presented.
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P. J. Carrington, V. A. Solov'ev, Q. Zhuang, S. V. Ivanov, A. Krier, "Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes", Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000I (1 February 2008); doi: 10.1117/12.755465; https://doi.org/10.1117/12.755465
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