This paper discusses the potential attributes of (110)-grown InAs/GaSb superlattices for infrared detection
applications. In comparison to (001)-grown structures, (110) SLs will be thinner, have higher mobilities, diffusion
lengths, quantum efficiencies, and gains. Unless growth issues arise, they should also have higher minority carrier
lifetimes, higher responsivities, lower noise, and higher detectivities. The first 8x8 envelope-function approximation
calculation for a (110)-oriented structure shows the bands to be slightly anisotropic and the oscillator strengths to be
polarization dependent. Layer widths for specific absorption thresholds were calculated.