Progress in MOVPE-growth of InGaN and InN

Takashi Matsuoka

doi:10.1117/12.768644

4 February 2008 Progress in MOVPE-growth of InGaN and InN

Takashi Matsuoka

Proceedings Volume 6900, Quantum Sensing and Nanophotonic Devices V; 69000S (2008) https://doi.org/10.1117/12.768644
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity- controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.

Citation Download Citation

Takashi Matsuoka "Progress in MOVPE-growth of InGaN and InN", Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000S (4 February 2008); https://doi.org/10.1117/12.768644

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