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4 February 2008 Progress in MOVPE-growth of InGaN and InN
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Abstract
Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity- controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Matsuoka "Progress in MOVPE-growth of InGaN and InN", Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000S (4 February 2008); https://doi.org/10.1117/12.768644
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