11 February 2008 Length dependence of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process
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Abstract
Wire-length dependences of In-place polarization anisotropy in GaInAsP/InP quantum-wire (Q-wire) structures fabricated by dry-etching and regrowth processes were investigated using a photo luminescence (PL) measurement. The reduction of polarization anisotropy of Q-wires is expected in the shorter Q-Wires. A strain-compensated GaInAsP/InP single-quantum-well initial wafer was prepared by an organometallic-vapor-phase-epitaxy (OMVPE) system. Using electron beam lithography, Ti-mask lift-off, CH4/H2 reactive-ion-etching and OMVPE regrowth processes, various lengths (L) of the Q-wires were realized for wire-widths (W) of 11-, 14- and 18 nm. The Q-wires were measured the polarization property in normal and parallel to wire-length direction at room temperature. As a result, stronger polarization anisotropy was observed in narrower Q-Wires and reduced in shorter length of Q-Wires. Furthermore, polarization anisotropy of strained Q-Wires was predicted by taking in account of the dipole moment interaction between conduction and heavy-hole subbands optical transition. A 5-nm narrowed wire-width calculation results shows a good agreement with experimental results. This could be considered that a strain distribution in the Q-Wire induced the energy band deformation at the edge of the Q-Wire, which reduced the effective wire-width to much narrower than the actual size observed by an SEM image.
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D. Plumwongrot, D. Plumwongrot, Y. Tamura, Y. Tamura, Y. Nishimoto, Y. Nishimoto, M. Kurokawa, M. Kurokawa, T. Okumura, T. Okumura, T. Maruyama, T. Maruyama, N. Nishiyama, N. Nishiyama, S. Arai, S. Arai, } "Length dependence of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process", Proc. SPIE 6902, Quantum Dots, Particles, and Nanoclusters V, 690205 (11 February 2008); doi: 10.1117/12.762201; https://doi.org/10.1117/12.762201
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