11 February 2008 Near-field fluorescence lifetime imaging of semiconductor interfaces used in laser cooling
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Abstract
Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. This instrumentation helps characterize samples for laser cooling.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel A. Bender, Mansoor Sheik-Bahae, "Near-field fluorescence lifetime imaging of semiconductor interfaces used in laser cooling", Proc. SPIE 6907, Laser Refrigeration of Solids, 690704 (11 February 2008); doi: 10.1117/12.765236; https://doi.org/10.1117/12.765236
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