12 February 2008 Theory of luminescence and optical refrigeration in p-doped semiconductors
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Abstract
We present a microscopic many-body theory of optical refrigeration of p-doped semiconductors. Conceptually, the refrigeration mechanism is the upconversion of pump photons through absorption and subsequent luminescence by electron-hole pairs. The electron-hole pair can be an unbound pair, a pair bound by the attractive Coulomb interation (exciton), or a pair in which the hole is located at an acceptor site. Assuming the electron-hole pairs to be in quasi-thermal equilibrium, our theory calculates its absorption and luminescence spectra within a diagrammatic (real-time) Green's function approach at the self-consistent T-matrix level. The strong on-site Coulomb repulsion of holes at acceptor sites is taken into account via a truncation of the acceptor Fock space, which excludes states with higher than single-hole occupation. The resulting absorption and luminescence spectra are used in a cooling threshold analysis for GaAs that also takes into account other losses into heat. We compare the present results for p-doped GaAs with previous ones obtained for undoped GaAs.
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G. Rupper, N. H. Kwong, B. Gu, R. Binder, "Theory of luminescence and optical refrigeration in p-doped semiconductors", Proc. SPIE 6907, Laser Refrigeration of Solids, 690705 (12 February 2008); doi: 10.1117/12.765276; https://doi.org/10.1117/12.765276
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