29 January 2008 Characteristics of GaInNAsSb/GaAs VCSELs operating near 1.55um
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A detailed study of the high-power pulsed operation of C-band optically-pumped GaInNAsSb vertical cavity surface emitting lasers is reported. The devices employ a resonant periodic gain structure grown by molecular beam epitaxy on a GaAs substrate with a 31-pair GaAs/AlAs bottom distributed Bragg reflector and a 4-λ, GaAs-based resonant cavity containing 10 GaInNAsSb quantum wells distributed among the 7 antinodes of the electric field. A dual-pump-band SiO2/TiO2 dielectric top mirror allows efficient optical pumping via low reflectivities at 808nm and 1064nm while providing very high reflectivity at the 1.55μm target emission wavelength. The laser characteristics were evaluated using both a Q-switched Nd:YAG 1064nm pump and a 20W-peak 180ns-pulsed 850nm diode laser. The importance of the gain-cavity detuning was evident from time-dependent spectral measurements of laser material subjected to post-growth annealing at different temperatures between 725 and 775°C. The highest annealing temperature produces the largest blue shift of the gain peak relative to the cavity resonance, resulting in the best power transfer characteristics as well as reduced temperature sensitivity.
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James A. Gupta, James A. Gupta, Stephane Calvez, Stephane Calvez, Nicolas Laurand, Nicolas Laurand, Jelmer Weda, Jelmer Weda, David Burns, David Burns, Daniel Poitras, Daniel Poitras, Geof C. Aers, Geof C. Aers, Martin D. Dawson, Martin D. Dawson, } "Characteristics of GaInNAsSb/GaAs VCSELs operating near 1.55um", Proc. SPIE 6908, Vertical-Cavity Surface-Emitting Lasers XII, 69080E (29 January 2008); doi: 10.1117/12.763829; https://doi.org/10.1117/12.763829

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