5 February 2008 On-chip integration of InGaAs/GaAs quantum dot lasers with waveguides and modulators on silicon
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Abstract
Compound-semiconductor-based photonic devices, including lasers and modulators, directly grown and on-chip integrated on Si substrates provide a promising approach for the realization of optical interconnects with CMOS compatibility. Utilizing quantum dots as efficient dislocation filters near the GaAs-Si interface, for the first time, we demonstrated high-performance InGaAs/GaAs quantum dot (QD) lasers on silicon with a relatively low threshold current (Jth = 900 A/cm2), large small-signal modulation bandwidth of 5.5 GHz, and a high characteristic temperature (T0 = 278 K). The integrated InGaAs QD lasers with quantum well (QW) electroabsorption modulators, achieved through molecular beam epitaxy (MBE) growth and regrowth, exhibit a coupling coefficient greater than 20% and a modulation depth ~100% at 5 V reverse bias. We achieved the monolithic integration of amorphous and crystalline silicon waveguides with quantum dot lasers by using plasma-enhanced-chemical-vapor-deposition (PECVD) and membrane transfer, respectively. Finally, preliminary results on the integration of QD lasers with Si CMOS transistors are presented.
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Jun Yang, Jun Yang, Pallab Bhattacharya, Pallab Bhattacharya, Guoxuan Qin, Guoxuan Qin, Zhenqiang Ma, Zhenqiang Ma, } "On-chip integration of InGaAs/GaAs quantum dot lasers with waveguides and modulators on silicon", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090N (5 February 2008); doi: 10.1117/12.765889; https://doi.org/10.1117/12.765889
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