Paper
5 February 2008 High-brightness diode lasers with very narrow vertical divergence
Götz Erbert, Frank Bugge, Bernd Eppich, Joerg Fricke, Karl-Heinz Hasler, Katrin Paschke, Agnieszka Pietrzak, Hans Wenzel, Günther Tränkle
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Abstract
A narrow vertical divergence of about 30° including 95% of power is highly desired in many applications. Principal designs for narrow divergence diode lasers like simple broad waveguide and more sophisticated resonant waveguide structures are discussed. Devices with narrow divergence could be realized in the wavelength range 800nm to 1060nm using very broad waveguide structures. More than 1W in fundamental mode and about 5W nearly diffraction limited output could be achieved from ridge waveguide laser and from diode lasers with tapered resonator structure, respectively.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Götz Erbert, Frank Bugge, Bernd Eppich, Joerg Fricke, Karl-Heinz Hasler, Katrin Paschke, Agnieszka Pietrzak, Hans Wenzel, and Günther Tränkle "High-brightness diode lasers with very narrow vertical divergence", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090P (5 February 2008); https://doi.org/10.1117/12.760874
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Cited by 10 scholarly publications.
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KEYWORDS
Waveguides

Semiconductor lasers

Quantum wells

Resonators

Resistance

Cladding

Refractive index

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