1 February 2008 Asymmetric Al-free active region laser structure for high-brightness tapered lasers at 975 nm
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Abstract
We have realized an asymmetric laser structure at 975 nm, based on an Al-free active region. The quantum wells are located near the p-cladding, so that most of the waveguide is n-type, which allows for reduced optical losses and series resistance. On uncoated broad-area lasers, we have obtained very low optical losses of 0.4 cm-1, together with a high internal quantum efficiency of close to 100%. Based on this structure, we have realized index-guided tapered lasers delivering 1.3W CW, with a narrow far-field angle of 2.5° (FWHM) and 5.8° (at 1/e2) in the slow axis, and a good beam propagation ratio M2 = 1.6. The lasers reach a high maximum wall-plug efficiency of 56%. These tapered lasers deliver a maximum power of 1.5W CW with M2 < 3. The results on the asymmetric structure are compared with those of a symmetric laser structure.
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N. Michel, N. Michel, M. Calligaro, M. Calligaro, M. Lecomte, M. Lecomte, O. Parillaud, O. Parillaud, M. Krakowski, M. Krakowski, J. M. G. Garcia-Tijero, J. M. G. Garcia-Tijero, H. Odriozola, H. Odriozola, I. Esquivias, I. Esquivias, } "Asymmetric Al-free active region laser structure for high-brightness tapered lasers at 975 nm", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090R (1 February 2008); doi: 10.1117/12.763404; https://doi.org/10.1117/12.763404
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