Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

M. Leszczynski; I. Grzegory; M. Boćkowski; B. Łucznik; T. Suski; P. Perlin; R. Czernecki; G. Targowski; M. Sarzyński; M. Kryśko; P. Prystawko; G. Kamler; G. Nowak; S. Porowski

doi:10.1117/12.755767

14 February 2008 Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

M. Leszczynski, I. Grzegory, M. Boćkowski, B. Łucznik, T. Suski, P. Perlin, R. Czernecki, G. Targowski, M. Sarzyński, M. Kryśko, P. Prystawko, G. Kamler, G. Nowak, S. Porowski

Author Affiliations +

Proceedings Volume 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII; 69100G (2008) https://doi.org/10.1117/12.755767
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Violet and blue Laser diodes, as well as highly efficient high-power Light Emitting Diodes (including any UV emitters) can be constructed using low-dislocation-density freestanding GaN substrates, either produced as thick HVPE layers on foreign substrates, or using direct methods of crystallization as ammonothermal one or high pressure growth from the nitrogen solution in gallium. This paper shows some of the most most important issues concerning application of such substrates. The first issue is the choice of the substrate thickness influencing the accommodation of strain, cracking and bowing of the samples. In this point, a new way of prestressing the substrate by lateral patterning will be presented. The second issue is the surface preparation either by mechanical polishing and reactive ion etching, or mechano-chemical polishing, in particular, a distribution of defects revealed by chemical etching will be discussed. Finally, the problem of substrate misorientation influencing the further morphology and indium incorporation into InGaN quantum wells will be shown. For higher misorientation of the substrates, the incorporation of indium decreases , but at the same time, the fluctuations of indium increase giving blue-shifted, weaker and broader photoluminescence peaks.

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M. Leszczynski, I. Grzegory, M. Boćkowski, B. Łucznik, T. Suski, P. Perlin, R. Czernecki, G. Targowski, M. Sarzyński, M. Kryśko, P. Prystawko, G. Kamler, G. Nowak, and S. Porowski "Secrets of GaN substrates properties for high luminousity of InGaN quantum wells", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100G (14 February 2008); https://doi.org/10.1117/12.755767

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