13 February 2008 Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2/polystyrene microlens arrays
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Abstract
We demonstrated and analyzed 480-nm emitting III-Nitride LEDs using SiO2/polystyrene (PS) microlens arrays, deposited via rapid-convective-deposition. Output power of MOCVD-grown InGaN QW LEDs with SiO2/PS microlens exhibited improvement of 219%. Numerical simulation of the light extraction efficiency optimization of III-Nitride LEDs with SiO2/PS microlens was carried out using Monte Carlo ray tracing including 3D self-consistent photon-carrier interaction. The light extraction efficiency of the LEDs with microlens array is optimized for the PS layer thickness and the SiO2 microspheres diameter. The simulations show good agreement with experiments, indicating the use of SiO2/PS microlens leads to increased photon escape cone.
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Yik-Khoon Ee, Yik-Khoon Ee, Pisist Kumnorkaew, Pisist Kumnorkaew, Hua Tong, Hua Tong, Ronald A. Arif, Ronald A. Arif, James F. Gilchrist, James F. Gilchrist, Nelson Tansu, Nelson Tansu, } "Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2/polystyrene microlens arrays", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100M (13 February 2008); doi: 10.1117/12.763973; https://doi.org/10.1117/12.763973
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