26 March 2008 E-beam direct write alignment strategies for the next generation node
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Abstract
New types of alignment marks to be applied in electron beam direct write (EBDW) have been studied theoretically and experimentally. The dependence of signal contrast and signal form on such mark properties like step height, mark pitch and stack material has been investigated in detail using Monte Carlo simulations. The different alignment marks were etched in Si to different depths and the respective alignment repeatability was determined with a Vistec SB3050 DW lithography tool. Finally, for the most promising mark, test exposures were performed and the overlay determined.
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H. Alves, H. Alves, P. Hahmann, P. Hahmann, K.-H. Kliem, K.-H. Kliem, U. Weidenmueller, U. Weidenmueller, S. Jahr, S. Jahr, C. G. Frase, C. G. Frase, D. Gnieser, D. Gnieser, H. Bosse, H. Bosse, R. Zimmermann, R. Zimmermann, C. Arndt, C. Arndt, } "E-beam direct write alignment strategies for the next generation node", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210I (26 March 2008); doi: 10.1117/12.771585; https://doi.org/10.1117/12.771585
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