20 March 2008 CO2 laser-produced Sn-plasma source for high-volume manufacturing EUV lithography
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We are developing a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The light source is based on a high power, high repetition rate CO2 laser system, a tin target and a magnetic ion guiding for tin treatment. The laser system is a master oscillator power amplifier (MOPA) configuration. We have achieved an average laser output power of 10 kW at 100 kHz by a single laser beam with good beam quality. EUV in-band power equivalent to 60 W at intermediate focus was produced by irradiating a tin rotating plate with 6 kW laser power. This light source is scalable to more than 200 W EUV in-band power based on a 20-kW CO2 laser. Collector mirror life can be extended by using droplet target and magnetic ion guiding. Effectiveness of the magnetic ion guiding is examined by monitoring the motion of fast Sn ion in a large vacuum chamber with a maximum magnetic flux density of 2 T.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Endo, Hideo Hoshino, Takashi Suganuma, Krzysztof Nowak, Tatsuya Yanagida, Takayuki Yabu, Takeshi Asayama, Yoshifumi Ueno, Masato Moriya, Masaki Nakano, Hiroshi Someya, Toshihiro Nishisaka, Tamotsu Abe, Georg Soumagne, Hiroshi Komori, Hakaru Mizoguchi, Akira Sumitani, Koichi Toyoda, "CO2 laser-produced Sn-plasma source for high-volume manufacturing EUV lithography", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210T (20 March 2008); doi: 10.1117/12.771959; https://doi.org/10.1117/12.771959


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