Radiation-induced defect formation and reactivity of model TiO2 capping layers with MMA: a comparison with Ru

B. V. Yakshinskiy; M. N. Hedhili; S. Zalkind; M. Chandhok; Theodore E. Madey

doi:10.1117/12.772798

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21 March 2008 Radiation-induced defect formation and reactivity of model TiO₂ capping layers with MMA: a comparison with Ru

B. V. Yakshinskiy, M. N. Hedhili, S. Zalkind, M. Chandhok, Theodore E. Madey

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Proceedings Volume 6921, Emerging Lithographic Technologies XII; 692114 (2008) https://doi.org/10.1117/12.772798
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Our goal is to provide insights into surface processes that affect the reflectivity and lifetimes of TiO₂ and Ru-capped multilayer mirrors used in extreme ultraviolet (EUV) lithography. Several surface-sensitive ultrahigh-vacuum techniques are used to characterize thermally-induced and electron-induced surface reactions of methyl methacrylate (MMA), a model for hydrocarbons found in EUV lithography vacuum chambers; low-energy electron beams are used to mimic excitations initiated by EUV radiation. Carbon film growth is measured on TiO₂ surfaces during electron bombardment (at 20 eV and 100 eV) in MMA vapor; C growth rates are compared on Ru surfaces. The initial rates on the clean surfaces are very different: a C film grows more rapidly on TiO₂ than on Ru. However, the limiting growth rates are the same for C thicknesses greater than ~1 to 1.5 nm, when MMA interacts with a C film. Irradiation of the C films in O₂ gas, or in MMA + O₂, has a mitigating effect on TiO₂ surfaces.

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B. V. Yakshinskiy, M. N. Hedhili, S. Zalkind, M. Chandhok, and Theodore E. Madey "Radiation-induced defect formation and reactivity of model TiO₂ capping layers with MMA: a comparison with Ru", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692114 (21 March 2008); https://doi.org/10.1117/12.772798

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