27 March 2008 Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials
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Abstract
Lifetime of EUVL masks which are intentionally contaminated with carbon is investigated by comparing Si and Ru capping layer. Carbon deposition is observed not only on the multilayer, but also on the absorber sidewall of the mask. Deposited carbon on the sidewall during EUV exposure gradually varies mask CD and also induces the changes in the wafer printability and dose in the scanner. In addition, we compare the effects of carbon contamination between Si and Ru capped blank. Ru capped blank shows longer mask mean time between cleaning (MTBC) than Si capped blank by 25% in our experiments.
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Sungmin Huh, Sungmin Huh, Hoon Kim, Hoon Kim, Gisung Yoon, Gisung Yoon, Jaehyuck Choi, Jaehyuck Choi, Han-Shin Lee, Han-Shin Lee, Dong Gun Lee, Dong Gun Lee, Byungsup Ahn, Byungsup Ahn, Hwan-Seok Seo, Hwan-Seok Seo, Dongwan Kim, Dongwan Kim, Seoung Sue Kim, Seoung Sue Kim, Han Ku Cho, Han Ku Cho, Takeo Watanabe, Takeo Watanabe, Hiroo Kinoshita, Hiroo Kinoshita, "Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692115 (27 March 2008); doi: 10.1117/12.772412; https://doi.org/10.1117/12.772412
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