27 March 2008 Study of system performance in SFET
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Abstract
We shipped a small field exposure tool (SFET) to Selete (Semiconductor Leading Edge Technologies, Japanese Consortium) in 2006. The SFET was founded for the purpose of EUVL mask and resist development. We have been working on the exposure test and the tool evaluation in collaboration with Selete. In the development of the SFET, We have experienced to connect two types of light source to the SFET, LPP light source and DPP light source. And now we operate the SFET with DPP light source. On exchanging light source for DPP light source from LPP light source, we planed to apply the new illuminator unit optimized for DPP light source. The new illuminator unit of the SFET will improve dose uniformity on the imaging surface. We have installed the new illuminator unit of the SFET at Selete in 2007, and evaluated the effects of dose uniformity. In EUV lithography, the system performance reflects sensitively to the exposure results. We have been evaluating the SFET quantitatively on mainly sensitive factors, in the system performance, to exposure result. We try to take a correlation between the system performance and exposure results. In the system performance, the synchronization error between the wafer and mask stages is one of the main factors to exposure sensitivity. We continue to evaluate the relations between the system performance and the exposure results.
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Naosuke Nishimura, Gaku Takahashi, Toshihiko Tsuji, Hideki Morishima, Kazuhiko Kajiyama, Shigeyuki Uzawa, "Study of system performance in SFET", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211C (27 March 2008); doi: 10.1117/12.771952; https://doi.org/10.1117/12.771952
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