28 March 2008 Extreme ultraviolet resist outgassing and its effect on nearby optics
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Abstract
Extreme ultraviolet (EUV) photoresists are known to outgas during exposure to EUV radiation in the vacuum environment. This is of particular concern since some of the outgassed species may contaminate the nearby EUV optics and cause a loss of reflectivity and therefore throughput of the EUV exposure tools. Due to this issue, work has been performed to measure the species and quantities that outgas from EUV resists. Additionally, since the goal of these measurements is to determine the relative safety of various resists near EUV optics, work has been performed to measure the deposition rate of the outgassed molecules on Mo/Si-coated witness plate samples. The results for various species and tests show little measurable effect from resist components on optics contamination with modest EUV exposure doses.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory Denbeaux, Rashi Garg, Chimaobi Mbanaso, Justin Waterman, Leonid Yankulin, Alin Antohe, Yu-Jen Fan, Warren Montgomery, Kim Dean, Kevin Orvek, Andrea Wüest, Yayi Wei, Frank Goodwin, Obert Wood, Chiew-Seng Koay, Eric Gullikson, Andy Aquila, Charles Tarrio, Steven Grantham, Saša Bajt, "Extreme ultraviolet resist outgassing and its effect on nearby optics", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211G (28 March 2008); doi: 10.1117/12.772670; https://doi.org/10.1117/12.772670
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