28 March 2008 Film quantum yields of EUV and ultra-high PAG photoresists
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Proceedings Volume 6921, Emerging Lithographic Technologies XII; 69211I (2008); doi: 10.1117/12.774099
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States
Abstract
Base titration methods are used to determine C-parameters for three industrial EUV photoresist platforms (EUV- 2D, MET-2D, XP5496) and twenty academic EUV photoresist platforms. X-ray reflectometry is used to measure the density of these resists, and leads to the determination of absorbance and film quantum yields (FQY). Ultrahigh levels of PAG show divergent mechanisms for production of photoacids beyond PAG concentrations of 0.35 moles/liter. The FQY of sulfonium PAGs level off, whereas resists prepared with iodonium PAG show FQYs that increase beyond PAG concentrations of 0.35 moles/liter, reaching record highs of 8-13 acids generated/EUV photons absorbed.
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Elsayed Hassanein, Craig Higgins, Patrick Naulleau, Richard Matyi, Gregg Gallatin, Gregory Denbeaux, Alin Antohe, Jim Thackeray, Kathleen Spear, Charles Szmanda, Christopher N. Anderson, Dimitra Niakoula, Matthew Malloy, Anwar Khurshid, Cecilia Montgomery, Emil C. Piscani, Andrew Rudack, Jeff Byers, Andy Ma, Kim Dean, Robert Brainard, "Film quantum yields of EUV and ultra-high PAG photoresists", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211I (28 March 2008); doi: 10.1117/12.774099; http://dx.doi.org/10.1117/12.774099
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KEYWORDS
Quantum efficiency

Extreme ultraviolet lithography

Extreme ultraviolet

Photoresist materials

X-rays

Absorbance

Photons

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