High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning

I. McMackin; J. Perez; K. Selinidis; J. Maltabes; D. Resnick; S. V. Sreenivassan

doi:10.1117/12.773970

21 March 2008 High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning

I. McMackin, J. Perez, K. Selinidis, J. Maltabes, D. Resnick, S. V. Sreenivassan

Proceedings Volume 6921, Emerging Lithographic Technologies XII; 69211L (2008) https://doi.org/10.1117/12.773970
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Imprint lithography has been shown to be an effective method for the replication of nanometer-scale structures from an imprint mask (template) or mold. Step and Flash Imprint Lithography (S-FIL®) is unique in its ability to address both resolution and alignment. Recently overlay across a 200 mm wafer of less than 20nm, 3σ has been demonstrated. Current S-FIL resolution and alignment performance motivates the consideration of nano-imprint lithography as a Next Generation Lithography (NGL) solution for IC production. During the S-FIL process, a transferable image, an imprint, is produced by mechanically molding a liquid UV-curable resist on a wafer. Acceptance of imprint lithography for CMOS manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This report summarizes the result of defect inspections of wafers patterned using S-FIL. Wafer inspections were performed with KLA Tencor- 2132 (KT-2132) and KLA Tencor eS23 (KT-eS32) automated patterned wafer inspection tools. Imprint specific defectivity was shown to be ≤3 cm^-2 with some wafers having defectivity of less than 1 cm^-2 and many fields having 0 imprint specific defects, as measured with the KT-2132. KT eS32 inspection of 32 nm half pitch features indicated that the random defectivity resulting from the imprint process was low.

Citation Download Citation

I. McMackin, J. Perez, K. Selinidis, J. Maltabes, D. Resnick, and S. V. Sreenivassan "High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211L (21 March 2008); https://doi.org/10.1117/12.773970

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available