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21 March 2008 High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning
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Imprint lithography has been shown to be an effective method for the replication of nanometer-scale structures from an imprint mask (template) or mold. Step and Flash Imprint Lithography (S-FIL®) is unique in its ability to address both resolution and alignment. Recently overlay across a 200 mm wafer of less than 20nm, 3σ has been demonstrated. Current S-FIL resolution and alignment performance motivates the consideration of nano-imprint lithography as a Next Generation Lithography (NGL) solution for IC production. During the S-FIL process, a transferable image, an imprint, is produced by mechanically molding a liquid UV-curable resist on a wafer. Acceptance of imprint lithography for CMOS manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This report summarizes the result of defect inspections of wafers patterned using S-FIL. Wafer inspections were performed with KLA Tencor- 2132 (KT-2132) and KLA Tencor eS23 (KT-eS32) automated patterned wafer inspection tools. Imprint specific defectivity was shown to be ≤3 cm-2 with some wafers having defectivity of less than 1 cm-2 and many fields having 0 imprint specific defects, as measured with the KT-2132. KT eS32 inspection of 32 nm half pitch features indicated that the random defectivity resulting from the imprint process was low.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. McMackin, J. Perez, K. Selinidis, J. Maltabes, D. Resnick, and S. V. Sreenivassan "High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211L (21 March 2008);

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