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28 March 2008 Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano-imprint lithography
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Abstract
Direct patterning of low-dielectric constant (low-k) materials via nanoimprint lithography (NIL) has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. We report direct imprinting of sub-100 nm features into a high modulus methylsilsesquioxane-based organosilicate glass (OSG) material. An excellent fidelity of the pattern transfer process is quantified with nm precision using critical dimension small angle X-ray scattering (CD-SAXS) and specular X-ray reflectivity (SXR). X-ray porosimetry (XRP) and positron annihilation lifetime spectroscopy (PALS) measurements indicate that imprinting increases the inherent microporosity of the methylsilsequioxane-based OSG material. When a porogen (pore generating material) is added, imprinting decreases the population of mesopores associated with the porogen while retaining the enhanced microporosity. The net effect is a decrease the pore interconnectivity. There is also evidence for a sealing effect that is interpreted as an imprint induced dense skin at the surface of the porous pattern.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyun Wook Ro, Ronald L. Jones, Huagen Peng, Hae-Jeong Lee, Eric K. Lin, Alamgir Karim, Do Y. Yoon, David W. Gidley, and Christopher L. Soles "Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano-imprint lithography", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211M (28 March 2008); https://doi.org/10.1117/12.773004
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