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28 March 2008 Dependence of EUV mask printing performance on blank architecture
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EUV lithography is the leading candidate for sub-32nm half-pitch device manufacturing. This paper deals with the investigation of the impact of the mask blank architecture on the wafer print by EUV lithography. Presently the material stack on the mask is not fixed and different suppliers offer a range of variation. The purpose of the present paper is threefold, as detailed hereafter. First it is shown that there are possibilities to make EUV masks less prone to reflectivity loss by carbon contamination. An estimate is given for the required limitations on mask contamination and fabrication tolerance to keep the imaging impact below acceptable levels. These data can be used as preliminary error budgets for the individual and combined capping layer deterioration phenomena. Further-on, printing results on the Alpha Demo Tool (ADT) are reported, obtained with different reticles with identical layout produced on blanks with different mask stacks. In preparation for this experimental work simulations have been undertaken. The experimental results show good agreement in printing performance between the reticles tested. Finally, our work clearly shows the opportunity to reduce the absorber thickness without noticeable loss of contrast and with the big advantage of shadowing effect reduction.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rik Jonckheere, Yoonsuk Hyun, Fumio Iwamoto, Bart Baudemprez, Jan Hermans, Gian Francesco Lorusso, Ivan Pollentier, Anne-Marie Goethals, and Kurt Ronse "Dependence of EUV mask printing performance on blank architecture", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211W (28 March 2008); doi: 10.1117/12.771967;

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