1 April 2008 Integration issues in step and repeat UV nanoimprint lithography
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Abstract
Nanoimprint Lithography appears to be a competitive candidate for Next Generation Lithography in semiconductor industry due to its advantages concerning resolution and cost effectiveness. Moreover, UV-Nanoimprint Lithography (UV-NIL) should enable to reach good overlay values, which is also a major criterion for integration. In this paper, we present first integration results which were obtained on lines and contact holes. A specific template was designed for this purpose in collaboration with CEA-LETI, IMS and Molecular Imprints. This template was characterized by using various techniques (optical and SEM techniques) and showed quite a good quality of the template; in particular, 50 nm holes were defined. Molecular Imprints process was then tested by using Imprio55® at MESA+ Research Institute, University of Twente (Netherlands). In these experiments, 37 4.8 cm2 fields were imprinted on Double Side Polished wafers. For each field, 52 droplets were dispensed with various volumes. Resolution and non-uniformity were evaluated after imprinting. Then etching tests were performed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Charpin-Nicolle, C. Charpin-Nicolle, M. Irmscher, M. Irmscher, M. Pritschow, M. Pritschow, B. Vratzov, B. Vratzov, H. van Vossen, H. van Vossen, J. Chiaroni, J. Chiaroni, J. Massin, J. Massin, P. Gubbini, P. Gubbini, } "Integration issues in step and repeat UV nanoimprint lithography", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69212I (1 April 2008); doi: 10.1117/12.790732; https://doi.org/10.1117/12.790732
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