20 March 2008 Diblock copolymer directed self-assembly for CMOS device fabrication
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Abstract
We present our work on using one level of templated self-assembly using 70:30::PS-b-PMMA. Focus is on the fabrication of top-gated silicon MOSFETs and simple circuits. The potential choice as a first demonstration is to use 70:30::PS-b-PMMA to define the contact holes of MOSFETs. Contact holes make a good starting point because of both their size and repetition in view of today's design. We have presented our work of solving half-hole problem when adopting templated selfassembly. Results of transferring the self-assembled holes from the polymer mask to a silicon dioxide layer by plasma etching and filling the etched holes in silicon dioxide with aspect ratio of approximately one to three are presented. Potential integration issues for making MOSFETs will also be addressed.
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Li-Wen Chang, Li-Wen Chang, Marissa A. Caldwell, Marissa A. Caldwell, H.-S. Philip Wong, H.-S. Philip Wong, } "Diblock copolymer directed self-assembly for CMOS device fabrication", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69212M (20 March 2008); doi: 10.1117/12.772000; https://doi.org/10.1117/12.772000
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