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21 March 2008 Progress in extreme ultraviolet interferometric lithography at the University of Wisconsin
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Abstract
Extreme Ultraviolet Interferometric lithography (EUV-IL) can generate periodic patterns useful to characterize photoresist materials and to create templates for self-assembled geometries. The Center for NanoTechnology has developed a novel EUV-IL beamline dedicated to nanopatterning using radiation from an undulator on the Aladdin storage ring at the University of Wisconsin-Madison. The beamline and the EUV-IL system were commissioned in 2006; we have completed several characterization studies, and modified several key components to improve resolution and usability. The EUV-IL system can expose different pitches at the same time producing patterns with a range of halfpitch from 55nm down to 20nm and less on the wafer. We can also introduce a variable image modulation by performing double exposures, overlapping the interference pattern with the transmitted zero order. Recently we have demonstrated down to 20nm half-pitch printed IL image in PMMA resist.
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Artak Isoyan, Yang-Chun Cheng, Fan Jiang, John Wallace, Mikhail Efremov, Paul Nealey, and Franco Cerrina "Progress in extreme ultraviolet interferometric lithography at the University of Wisconsin", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69212R (21 March 2008); https://doi.org/10.1117/12.772681
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