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21 March 2008 Sn droplet target development for laser produced plasma EUV light source
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Abstract
We are developing a Sn droplet generator for a LPP HVM EUV light source. Droplet trains with frequencies up to 500kHz and droplet diameters below 20um are generated via the continuous jet method. Charging single droplets and using deflector electrodes these charged droplets are selected from the droplet train and irradiated by the drive laser. Due to the small droplet diameter, the drive laser otherwise irradiates several droplets inside the droplet train thus increasing the Sn debris as is experimentally shown. In addition, the paper outlines that a 30um droplet size is the mass limit for up to 180W EUV generation based on the assumption that each Sn atom emits on average a single in-band photon.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaki Nakano, Takayuki Yabu, Hiroshi Someya, Tamotsu Abe, Georg Soumagne, Akira Endo, and Akira Sumitani "Sn droplet target development for laser produced plasma EUV light source", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692130 (21 March 2008); https://doi.org/10.1117/12.771820
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