EUV near normal incidence collector development at SAGEM

R. Mercier Ythier; X. Bozec; R. Geyl; A. Rinchet; Christophe Hecquet; Marie-Françoise Ravet-Krill; Franck Delmotte; Benoît Sassolas; Raffaele Flaminio; Jean-Marie Mackowski; Christophe Michel; Jean-Luc Montorio; Nazario Morgado; Laurent Pinard; Elodie Roméo

doi:10.1117/12.787620

3 April 2008 EUV near normal incidence collector development at SAGEM

R. Mercier Ythier, X. Bozec, R. Geyl, A. Rinchet, Christophe Hecquet, Marie-Françoise Ravet-Krill, Franck Delmotte, Benoît Sassolas, Raffaele Flaminio, Jean-Marie Mackowski, Christophe Michel, Jean-Luc Montorio, Nazario Morgado, Laurent Pinard, Elodie Roméo

Author Affiliations +

Proceedings Volume 6921, Emerging Lithographic Technologies XII; 692135 (2008) https://doi.org/10.1117/12.787620
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Through its participation to European programs, SAGEM has worked on the design and manufacturing of normal incidence collectors for EUV sources. By opposition to grazing incidence, normal incidence collectors are expected to collect more light with a simpler and cheaper design. Designs are presented for the two current types of existing sources: Discharge Produced Plasma (DPP) and Laser Produced Plasma (LPP). Collection efficiency is calculated in both cases. It is shown that these collectors can achieve about 10 % efficiency for DPP sources and 40 % for LPP sources. SAGEM works on the collectors manufacturability are also presented, including polishing, coating and cooling. The feasibility of polishing has been demonstrated with a roughness better than 2 angstroms obtained on several materials (glass, silicon, Silicon Carbide, metals...). SAGEM is currently working with the Institut d'Optique and the Laboratoire des Materiaux Avancés on the design and the process of EUV coatings for large mirrors. Lastly, SAGEM has studied the design and feasibility of an efficient thermal control, based on a liquid cooling through slim channels machined close to the optical surface.

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R. Mercier Ythier, X. Bozec, R. Geyl, A. Rinchet, Christophe Hecquet, Marie-Françoise Ravet-Krill, Franck Delmotte, Benoît Sassolas, Raffaele Flaminio, Jean-Marie Mackowski, Christophe Michel, Jean-Luc Montorio, Nazario Morgado, Laurent Pinard, and Elodie Roméo "EUV near normal incidence collector development at SAGEM", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 692135 (3 April 2008); https://doi.org/10.1117/12.787620

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