21 March 2008 Investigation of sensitivity of extreme ultraviolet resists to out-of-band radiation
Author Affiliations +
Proceedings Volume 6921, Emerging Lithographic Technologies XII; 69213L (2008); doi: 10.1117/12.772695
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States
Abstract
A method to evaluate the sensitivity of photoresists used for extreme ultraviolet (EUV) lithography has been developed. EUV sources produce out-of-band radiation and the reflective optics used in EUV tools reflect some of this out-of-band light on the wafer plane. The effect of exposing these photoresists to this unwanted light can reduce the image contrast on the wafer, and thereby reduce the image quality of the printed images. To examine the wavelengths of light that may have an adverse effect on these resists, a deuterium light source mounted with a monochromator has been designed to determine how sensitive these photoresists are to light at selected wavelengths in the range 190-650 nm.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chimaobi Mbanaso, Gregory Denbeaux, Kim Dean, Robert Brainard, Seth Kruger, Elsayed Hassanein, "Investigation of sensitivity of extreme ultraviolet resists to out-of-band radiation", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69213L (21 March 2008); doi: 10.1117/12.772695; https://doi.org/10.1117/12.772695
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Extreme ultraviolet lithography

Absorption

Extreme ultraviolet

Photoresist materials

Lithography

Semiconducting wafers

Light

Back to Top