3 April 2008 Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool
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Abstract
Microfield exposure tools (METs) continue to play a dominant role in the development of extreme ultraviolet (EUV) resists. Here we present an update on the SEMATECH Berkeley 0.3-NA MET and summarize the latest test results from high-resolution line-space and contact-hole printing. In practice, the resolution limit of contact-hole printing is generally dominated by contact size variation that is often speculated to originate form shot noise effects. Such observations of photon-noise limited performance are concerning because they suggest that future increased resist sensitivity would not be feasible. Recent printing data, however, indicates that the contact size variation problem is currently not a result of shot noise but rather attributable to the mask in combination with the resist-dominated mask error enhancement factor (MEEF). Also discussed is the importance of the contribution of the system-level line-edge roughness (LER) to resist LER values currently obtained with the SEMATECH Berkeley MET. We present the expected magnitude of such effects and compare the results to observed trends in LER performance from EUV resists over the past few years.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick P. Naulleau, Christopher N. Anderson, Jerrin Chiu, Kim Dean, Paul Denham, Kenneth A. Goldberg, Brian Hoef, Sungmin Huh, Gideon Jones, Bruno M. LaFontaine, Andy Ma, Dimitra Niakoula, Joo-on Park, and Tom Wallow "Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69213N (3 April 2008); doi: 10.1117/12.773833; https://doi.org/10.1117/12.773833
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