16 April 2008 Impact of sampling on uncertainty: semiconductor dimensional metrology applications
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Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69220X (2008); doi: 10.1117/12.772993
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States
Abstract
The International Technology Roadmap for Semiconductors (ITRS) provides a set of Metrology specifications as targets for each technology node. In the current edition (2007) of the ITRS the conventional precision (reproducibility) is replaced with a new metric - measurement uncertainty for dimensional metrology. This measurement uncertainty contains single tool precision, tool-to-tool matching, sampling uncertainty, and inaccuracy (sample-to-sample bias variation and other effects). Clearly, sampling uncertainty is a major component of measurement uncertainty. This paper elaborates on sampling uncertainty and provides statistical estimates for sampling uncertainty. The authors in this paper address the importance and the methods of proper sampling. The correct sampling captures and allows for the expression of the information needed for adequate patterning process control. Along with typical manufacturing process control cases (excursion control, advanced and statistical process control), several other applications are explored such as optical and electron beam line width measurement calibration, measurement tool evaluations, lithographic scanner assessment and optical proximity correction implementation. The authors show how appropriate choices among measurement techniques, sampling methods, and interpretation of measurement results give meaningful information for process control and demonstrate how an incorrect choice can lead to wrong conclusions.
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Benjamin Bunday, Bart Rijpers, Bill Banke, Chas Archie, Ingrid B. Peterson, Vladimir Ukraintsev, Thomas Hingst, Masafumi Asano, "Impact of sampling on uncertainty: semiconductor dimensional metrology applications", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69220X (16 April 2008); doi: 10.1117/12.772993; https://doi.org/10.1117/12.772993
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KEYWORDS
Critical dimension metrology

Semiconducting wafers

Metrology

Process control

Statistical analysis

Calibration

Scatterometry

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